HMS60N06D Datasheet and Replacement
Type Designator: HMS60N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DFN5X6-8L
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HMS60N06D Datasheet (PDF)
hms60n06d.pdf

HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous re
hms60n04eq.pdf

HMS60N04EQ N-Channel Super Trench Power MOSFET Description The HMS60N04EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti
hms60n10d.pdf

HMS60N10DN-Channel Super Trench Power MOSFET Primary Version Description The HMS60N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - HMS60N06D MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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