HMS7N65K Datasheet. Specs and Replacement
Type Designator: HMS7N65K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO252
HMS7N65K substitution
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HMS7N65K datasheet
hms7n65i hms7n65k.pdf
N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒
hms7n70i hms7n70k.pdf
N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒
Detailed specifications: HMS5N90I, HMS5N90K, HMS60N04EQ, HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T, HMS7N65I, AO3400, HMS7N70I, HMS7N70K, HMS80N06D, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85
Keywords - HMS7N65K MOSFET specs
HMS7N65K cross reference
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