HMS80N06D Datasheet. Specs and Replacement

Type Designator: HMS80N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6-8L

HMS80N06D substitution

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HMS80N06D datasheet

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HMS80N06D

N-Channel Super Trench Power MOSFET Description The HMS80N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous rec... See More ⇒

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HMS80N06D

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

 8.2. Size:995K  cn hmsemi
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HMS80N06D

HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat... See More ⇒

 8.3. Size:574K  cn hmsemi
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HMS80N06D

HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

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Detailed specifications: HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T, HMS7N65I, HMS7N65K, HMS7N70I, HMS7N70K, 10N60, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85, HMS80N85D, HMS85N03ED, HMS85N95

Keywords - HMS80N06D MOSFET specs

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