All MOSFET. HMS8N50I Datasheet

 

HMS8N50I Datasheet and Replacement


   Type Designator: HMS8N50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: IPAK
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HMS8N50I Datasheet (PDF)

 ..1. Size:930K  cn hmsemi
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HMS8N50I

HMS8N50K/HMS8N50IHMS8N50K/HMS8N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast swi

 9.1. Size:757K  cn hmsemi
hms8n60k hms8n60i.pdf pdf_icon

HMS8N50I

HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati

 9.2. Size:933K  cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N50I

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

 9.3. Size:1089K  cn hmsemi
hms8n70i hms8n70k.pdf pdf_icon

HMS8N50I

HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: JCS50N06FH | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL

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