HMS8N50I Datasheet. Specs and Replacement

Type Designator: HMS8N50I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: IPAK

HMS8N50I substitution

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HMS8N50I datasheet

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hms8n50k hms8n50i.pdf pdf_icon

HMS8N50I

HMS8N50K/HMS8N50I HMS8N50K/HMS8N50I 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast swi... See More ⇒

 9.1. Size:757K  cn hmsemi
hms8n60k hms8n60i.pdf pdf_icon

HMS8N50I

HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati... See More ⇒

 9.2. Size:933K  cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N50I

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic... See More ⇒

 9.3. Size:1089K  cn hmsemi
hms8n70i hms8n70k.pdf pdf_icon

HMS8N50I

HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic... See More ⇒

Detailed specifications: HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85, HMS80N85D, HMS85N03ED, HMS85N95, HMS85N95D, AON7408, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F, HMS8N60I, HMS8N60K, HMS8N65, HMS8N65D

Keywords - HMS8N50I MOSFET specs

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