All MOSFET. HMS8N60F Datasheet

 

HMS8N60F MOSFET. Datasheet pdf. Equivalent


   Type Designator: HMS8N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO220F

 HMS8N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HMS8N60F Datasheet (PDF)

 ..1. Size:975K  cn hmsemi
hms8n60 hms8n60f hms8n60d.pdf

HMS8N60F
HMS8N60F

HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power

 7.1. Size:757K  cn hmsemi
hms8n60k hms8n60i.pdf

HMS8N60F
HMS8N60F

HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati

 8.1. Size:933K  cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf

HMS8N60F
HMS8N60F

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

 8.2. Size:797K  cn hmsemi
hms8n65k hms8n65i.pdf

HMS8N60F
HMS8N60F

HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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