All MOSFET. GWM13S65YRX Datasheet

 

GWM13S65YRX MOSFET. Datasheet pdf. Equivalent

Type Designator: GWM13S65YRX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm

Package: TO220FP

GWM13S65YRX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GWM13S65YRX Datasheet (PDF)

 5.1. Size:522K  1
gwm13s65y.pdf

GWM13S65YRX GWM13S65YRX

GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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