IRF3305B PDF and Equivalents Search

 

IRF3305B Specs and Replacement

Type Designator: IRF3305B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO247

IRF3305B substitution

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IRF3305B datasheet

 ..1. Size:331K  inchange semiconductor
irf3305b.pdf pdf_icon

IRF3305B

isc N-Channel MOSFET Transistor IRF3305B FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM R... See More ⇒

 7.1. Size:267K  international rectifier
irf3305pbf.pdf pdf_icon

IRF3305B

PD - 95758A IRF3305PbF Features HEXFET Power MOSFET Designed to support Linear Gate Drive Applications D 175 C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0m Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and dev... See More ⇒

 7.2. Size:1364K  infineon
auirf3305.pdf pdf_icon

IRF3305B

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de... See More ⇒

 7.3. Size:245K  inchange semiconductor
irf3305.pdf pdf_icon

IRF3305B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3305 IIRF3305 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒

Detailed specifications: FDD6676S, FDD6680S, FDD6692, FDU6692, FDH20N40, FDP20N40, FDH34N40, FMV60N280S2HF, IRFZ44N, ISW65R041CFD, MDI5N40RH, MDP06N033TH, MDP06N090TH, MDP10N055TH, MDP12N50TH, MDP13N50TH, MDP18N50TH

Keywords - IRF3305B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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