All MOSFET. MDP13N50TH Datasheet

 

MDP13N50TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDP13N50TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 52.8 nS
   Cossⓘ - Output Capacitance: 173 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220

 MDP13N50TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDP13N50TH Datasheet (PDF)

 ..1. Size:1339K  magnachip
 mdp13n50th.pdf

MDP13N50TH MDP13N50TH

MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features The MDP13N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on- I = 13.0A @V = 10V D GSstate resistance, high switching performance R

 ..2. Size:288K  inchange semiconductor
 mdp13n50th.pdf

MDP13N50TH MDP13N50TH

isc N-Channel MOSFET Transistor MDP13N50THFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 6.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf

MDP13N50TH MDP13N50TH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 6.2. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf

MDP13N50TH MDP13N50TH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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