MMD60R360QRH PDF and Equivalents Search

 

MMD60R360QRH Specs and Replacement

Type Designator: MMD60R360QRH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 715 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

MMD60R360QRH substitution

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MMD60R360QRH datasheet

 ..1. Size:1563K  magnachip
mmd60r360qrh.pdf pdf_icon

MMD60R360QRH

MMD60R360Q Datasheet MMD60R360Q 600V 0.36 N-channel MOSFET Description MMD60R360Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 ..2. Size:310K  inchange semiconductor
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MMD60R360QRH

isc N-Channel MOSFET Transistor MMD60R360QRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 5.1. Size:1263K  magnachip
mmd60r360prh.pdf pdf_icon

MMD60R360QRH

MMD60R360P Datasheet MMD60R360P 600V 0.38 N-channel MOSFET Description MMD60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 5.2. Size:278K  inchange semiconductor
mmd60r360p.pdf pdf_icon

MMD60R360QRH

isc N-Channel MOSFET Transistor MMD60R360P FEATURES Static drain-source on-resistance RDS(on) 0.38 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 ... See More ⇒

Detailed specifications: MDP06N090TH, MDP10N055TH, MDP12N50TH, MDP13N50TH, MDP18N50TH, MDP5N50TH, MDP7N50, MDP9N50TH, IRLZ44N, MMD60R580PBRH, MMD65R380QRH, MMD80R1K2PRH, MMD80R1K2QZRH, MMD80R900PCRH, MMD80R900QZRH, MME60R290QRH, MME65R280QRH

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