MMD60R360QRH Specs and Replacement
Type Designator: MMD60R360QRH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 715 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
MMD60R360QRH substitution
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MMD60R360QRH datasheet
mmd60r360qrh.pdf
MMD60R360Q Datasheet MMD60R360Q 600V 0.36 N-channel MOSFET Description MMD60R360Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒
mmd60r360qrh.pdf
isc N-Channel MOSFET Transistor MMD60R360QRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
mmd60r360prh.pdf
MMD60R360P Datasheet MMD60R360P 600V 0.38 N-channel MOSFET Description MMD60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒
mmd60r360p.pdf
isc N-Channel MOSFET Transistor MMD60R360P FEATURES Static drain-source on-resistance RDS(on) 0.38 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 ... See More ⇒
Detailed specifications: MDP06N090TH, MDP10N055TH, MDP12N50TH, MDP13N50TH, MDP18N50TH, MDP5N50TH, MDP7N50, MDP9N50TH, IRLZ44N, MMD60R580PBRH, MMD65R380QRH, MMD80R1K2PRH, MMD80R1K2QZRH, MMD80R900PCRH, MMD80R900QZRH, MME60R290QRH, MME65R280QRH
Keywords - MMD60R360QRH MOSFET specs
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History: AOD3N80 | FDD6692
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