FDMC86244 PDF and Equivalents Search

 

FDMC86244 Specs and Replacement

Type Designator: FDMC86244

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.134 Ohm

Package: POWER33

FDMC86244 substitution

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FDMC86244 datasheet

 ..1. Size:374K  1
fdmc86244.pdf pdf_icon

FDMC86244

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:328K  fairchild semi
fdmc86244.pdf pdf_icon

FDMC86244

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr... See More ⇒

 ..3. Size:374K  onsemi
fdmc86244.pdf pdf_icon

FDMC86244

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:315K  fairchild semi
fdmc86240.pdf pdf_icon

FDMC86244

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -... See More ⇒

Detailed specifications: STP60L60F, FDMC86102LZ, STP60L60A, FDMC86106LZ, STP60L60, FDMC8622, STP45L01F, FDMC86240, 2N7000, FDMC86324, FDMC8651, STP454, FDMC86520L, FDMC8878, STP4410, FDMC8882, STP423S

Keywords - FDMC86244 MOSFET specs

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