All MOSFET. MMF80R900PCTH Datasheet

 

MMF80R900PCTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMF80R900PCTH
   Marking Code: 80R900PC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   trⓘ - Rise Time: 22.4 nS
   Cossⓘ - Output Capacitance: 508 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F

 MMF80R900PCTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMF80R900PCTH Datasheet (PDF)

 ..1. Size:1446K  magnachip
 mmf80r900pcth.pdf

MMF80R900PCTH MMF80R900PCTH

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:279K  inchange semiconductor
 mmf80r900pcth.pdf

MMF80R900PCTH MMF80R900PCTH

isc N-Channel MOSFET Transistor MMF80R900PCTHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 4.1. Size:1136K  magnachip
 mmf80r900pth.pdf

MMF80R900PCTH MMF80R900PCTH

MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 4.2. Size:1619K  magnachip
 mmf80r900pbth.pdf

MMF80R900PCTH MMF80R900PCTH

MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 4.3. Size:279K  inchange semiconductor
 mmf80r900pth.pdf

MMF80R900PCTH MMF80R900PCTH

isc N-Channel MOSFET Transistor MMF80R900PTHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HGD035N08A

 

 
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