MMF80R900QZTH PDF and Equivalents Search

 ..1. Size:1348K  magnachip
 mmf80r900qzth.pdf

MMF80R900QZ Datasheet MMF80R900QZ 800V 0.90 N-channel MOSFET Description MMF80R900QZ is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 5.1. Size:1446K  magnachip
 mmf80r900pcth.pdf

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 5.2. Size:1136K  magnachip
 mmf80r900pth.pdf

MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo... See More ⇒

 5.3. Size:1619K  magnachip
 mmf80r900pbth.pdf

MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 5.4. Size:279K  inchange semiconductor
 mmf80r900pcth.pdf

isc N-Channel MOSFET Transistor MMF80R900PCTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 5.5. Size:279K  inchange semiconductor
 mmf80r900pth.pdf

isc N-Channel MOSFET Transistor MMF80R900PTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒