FDMC86324 Datasheet and Replacement. Cross Reference Search

FDMC86324 Datasheet (PDF)

..1. Size:299K fairchild semi
fdmc86324.pdf pdf_icon

May 2010FDMC86324N-Channel Power Trench MOSFET 80 V, 20 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 mm

6.1. Size:492K fairchild semi
fdmc86320.pdf pdf_icon

June 2014FDMC86320N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or MSL1 robust

7.1. Size:281K fairchild semi
fdmc86340et80.pdf pdf_icon

January 2015FDMC86340ET80N-Channel Shielded Gate Power Trench MOSFET80 V, 68 A, 6.5 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

7.2. Size:241K fairchild semi
fdmc86340.pdf pdf_icon

January 2014FDMC86340N-Channel Shielded Gate Power Trench MOSFET80 V, 48 A, 6.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 10 V, ID = 14 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

Datasheet: FDMC86102LZ , STP60L60A , FDMC86106LZ , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , IRFB4115 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , FDMC8882 , STP423S , FDMC8884 .