HY3408 Specs and Replacement
Type Designator: HY3408
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 246 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 667 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
HY3408 substitution
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HY3408 datasheet
hy3408.pdf
HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC... See More ⇒
hy3403.pdf
HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P... See More ⇒
hy3403p hy3403b.pdf
HY3403P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/140A RDS(ON)=2.2m (typ.)@VGS = 10V RDS(ON)=2.7m (typ.) @VGS =4.5V 100% avalanche tested S GD Excellent CdV/dt effect decline Lead- Free Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Infor... See More ⇒
Detailed specifications: MMF65R600QTH, MMF80R450PBTH, MMF80R450QZTH, MMF80R900PCTH, MMF80R900QZTH, MMF80R900PBTH, MMFT60R195PCTH, S40N14S, IRF9540N, STP1806, YMP230N55, JFAM18N50C, JFAM20N50C, JFAM20N50D, JFAM20N50E, JFAM20N60C, JFAM20N60D
Keywords - HY3408 MOSFET specs
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