JFAM20N60C Datasheet and Replacement
Type Designator: JFAM20N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3P
JFAM20N60C substitution
JFAM20N60C Datasheet (PDF)
jfam20n60c.pdf
JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n60e.pdf
JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n60d.pdf
JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n65c.pdf
JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Datasheet: S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , JFAM20N50D , JFAM20N50E , AON7410 , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E .
History: FDM50R120AN4G | JFAM20N60E | BL60N25-W | APQ10SN40A
Keywords - JFAM20N60C MOSFET datasheet
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History: FDM50R120AN4G | JFAM20N60E | BL60N25-W | APQ10SN40A
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