All MOSFET. JFAM30N60E Datasheet

 

JFAM30N60E Datasheet and Replacement


   Type Designator: JFAM30N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO3P
 

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JFAM30N60E Datasheet (PDF)

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JFAM30N60E

JFAM30N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFAM30N60E

JFAM30N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Datasheet: JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E , IRFB3607 , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E , JFFC8N65C , JFFM13N50E .

History: LND08R055W3 | NCE60NP09S | MP9N150 | SDF21N60GAF | APT20M18B2VR | JCS3N80S | FMP12N50E

Keywords - JFAM30N60E MOSFET datasheet

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