JFFC20N65C MOSFET. Datasheet pdf. Equivalent
Type Designator: JFFC20N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
JFFC20N65C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JFFC20N65C Datasheet (PDF)
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jffc20n65c.pdf
jffc20n65c.pdf
JFFC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
