JFFC20N65C Datasheet and Replacement
Type Designator: JFFC20N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
JFFC20N65C substitution
JFFC20N65C Datasheet (PDF)
jffc20n65c.pdf

JFFC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
Datasheet: JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D , 2N7002 , JFFC7N65E , JFFC8N65C , JFFM13N50E , JFFM13N65D , JFFM20N60C , JFFM3N120E , JFFM3N150C , JFFM7N90C .
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