JFFC20N65C Datasheet. Specs and Replacement
Type Designator: JFFC20N65C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
JFFC20N65C substitution
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JFFC20N65C datasheet
jffc20n65c.pdf
JFFC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: JFAM24N50C, JFAM25N50E, JFAM30N50E, JFAM30N60E, JFAM50N50C, JFAM7N90C, JFFC10N65D, JFFC13N65D, AON7506, JFFC7N65E, JFFC8N65C, JFFM13N50E, JFFM13N65D, JFFM20N60C, JFFM3N120E, JFFM3N150C, JFFM7N90C
Keywords - JFFC20N65C MOSFET specs
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