All MOSFET. JFFM10N80C Datasheet

 

JFFM10N80C Datasheet and Replacement


   Type Designator: JFFM10N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

 JFFM10N80C substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFFM10N80C Datasheet (PDF)

 ..1. Size:518K  jiaensemi
 jfpc10n80c jffm10n80c.pdf pdf_icon

JFFM10N80C

JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER

 7.1. Size:843K  jiaensemi
 jfpc10n60c jffm10n60c.pdf pdf_icon

JFFM10N80C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFFM10N80C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:908K  jiaensemi
 jfpc16n50c jffm16n50c.pdf pdf_icon

JFFM10N80C

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

SHOW MORE

Datasheet: JFPC10N60C , JFFM10N60C , JFPC10N60CI , JFPC10N65C , JFFC10N65C , JFPC10N65CI , JFPC10N65D , JFPC10N80C , K2611 , JFPC11N50C , JFFM11N50C , JFPC12N60C , JFFM12N60C , JFPC12N65C , JFPC12N65D , JFPC13N50C , JFFM13N50C .

History: CS320 | JFFM13N50C | IRF7103I

Keywords - JFFM10N80C MOSFET datasheet

 JFFM10N80C cross reference
 JFFM10N80C equivalent finder
 JFFM10N80C lookup
 JFFM10N80C substitution
 JFFM10N80C replacement

 

 
Back to Top

 


 
.