All MOSFET. JFFM12N60C Datasheet

 

JFFM12N60C Datasheet and Replacement


   Type Designator: JFFM12N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

 JFFM12N60C substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFFM12N60C Datasheet (PDF)

 ..1. Size:918K  jiaensemi
jfpc12n60c jffm12n60c.pdf pdf_icon

JFFM12N60C

JFPC12N60C JFFM12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 12A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 7.1. Size:525K  jiaensemi
jfpc2n80c jffm12n80c.pdf pdf_icon

JFFM12N60C

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

 9.1. Size:889K  jiaensemi
jfpc18n50c jffm18n50c.pdf pdf_icon

JFFM12N60C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:843K  jiaensemi
jfpc10n60c jffm10n60c.pdf pdf_icon

JFFM12N60C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

Datasheet: JFFC10N65C , JFPC10N65CI , JFPC10N65D , JFPC10N80C , JFFM10N80C , JFPC11N50C , JFFM11N50C , JFPC12N60C , IRF730 , JFPC12N65C , JFPC12N65D , JFPC13N50C , JFFM13N50C , JFPC13N60CI , JFPC13N65C , JFFC13N65C , JFPC13N65CI .

History: RRQ030P03TR | SUN05A50ZF | WMO07N60C4 | SMK0260I | FMC12N60ES | ZXMC3A16DN8 | STT8205S

Keywords - JFFM12N60C MOSFET datasheet

 JFFM12N60C cross reference
 JFFM12N60C equivalent finder
 JFFM12N60C lookup
 JFFM12N60C substitution
 JFFM12N60C replacement

 

 
Back to Top

 


 
.