JFFM24N50C Datasheet and Replacement
Type Designator: JFFM24N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220F
JFFM24N50C substitution
JFFM24N50C Datasheet (PDF)
jfpc24n50c jffm24n50c.pdf

JFFM24N50C JFPC24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 24A, 500V, RDS(on)typ. = 0.19@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jffm20n60c.pdf

JFFM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfpc20n50c jffm20n50c.pdf

JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
Datasheet: JFPC18N65C , JFFC18N65C , JFPC18N65CI , JFPC20N50C , JFFM20N50C , JFPC20N60C , JFPC20N65C , JFPC24N50C , IRF840 , JFPC2N80C , JFFM12N80C , JFPC5N60C , JFFM5N60C , JFPC5N65C , JFFC5N65C , JFPC5N80C , JFFM5N80C .
History: STB40N20
Keywords - JFFM24N50C MOSFET datasheet
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History: STB40N20



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