JFFC7N65C Datasheet. Specs and Replacement
Type Designator: JFFC7N65C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220F
JFFC7N65C substitution
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JFFC7N65C datasheet
jfpc7n65c jffc7n65c.pdf
JFPC7N65C JFFC7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 650V, RDS(on)typ. = 1.3 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a... See More ⇒
jffc7n65e.pdf
JFFC7N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s... See More ⇒
Detailed specifications: JFFC5N65C, JFPC5N80C, JFFM5N80C, JFPC5N90C, JFFM5N90C, JFPC7N60C, JFFM7N60C, JFPC7N65C, IRFB4227, JFPC7N90C, JFPC8N60C, JFFM8N60C, JFPC8N65C, JFPC8N65D, JFPC8N80C, JFFM8N80C, JFPC9N50C
Keywords - JFFC7N65C MOSFET specs
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