All MOSFET. JFFC7N65C Datasheet

 

JFFC7N65C Datasheet and Replacement


   Type Designator: JFFC7N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F
 

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JFFC7N65C Datasheet (PDF)

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JFFC7N65C

JFPC7N65C JFFC7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 650V, RDS(on)typ. = 1.3@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a

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JFFC7N65C

JFFC7N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Datasheet: JFFC5N65C , JFPC5N80C , JFFM5N80C , JFPC5N90C , JFFM5N90C , JFPC7N60C , JFFM7N60C , JFPC7N65C , AON6414A , JFPC7N90C , JFPC8N60C , JFFM8N60C , JFPC8N65C , JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C .

History: IPA60R099P7 | NCEP035N60AK | FQD630TM | APT50M38JLL | FDB075N15AF085 | IRFPS3815PBF | NCEP040N12

Keywords - JFFC7N65C MOSFET datasheet

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