All MOSFET. QM3090M6 Datasheet

 

QM3090M6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM3090M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.9 nC
   trⓘ - Rise Time: 41.8 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: PRPAK5X6

 QM3090M6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM3090M6 Datasheet (PDF)

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QM3090M6 QM3090M6

uPI SEMI www.upi-semi.com Power Solutions for TODAY and TOMORROW IS NOW PART OF Please visit our website for more information: www.upi-semi.com The contents of this document are provided in connection with uPI Semiconductor Corp. (uPI) products. uPI makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and res

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QM3090M6 QM3090M6

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRL7833PBF | HYG020N04NA1B | SML20J122

 

 
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