All MOSFET. S80N18R Datasheet

 

S80N18R Datasheet and Replacement


   Type Designator: S80N18R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 178 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO220
 
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S80N18R Datasheet (PDF)

 ..1. Size:448K  1
 s80n18r s80n18s.pdf pdf_icon

S80N18R

SI-TECH SEMICONDUCTOR CO.,LTD S80N18R/S Electrical Characteristics (TC=25 unless otherwise noted)Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V IDSS Drain-Source Leakage Current VDS=78V, VGS=0V - - 1 uA IGSS Gate Leakage Current, Forward VGS=25V, VDS=0V - - 100 nA Gate Leakage Current, Reverse VGS=-25V, VDS=

 ..2. Size:2304K  1
 s80n18r s80n18s s80n18rn s80n18rp.pdf pdf_icon

S80N18R

S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S

 ..3. Size:2304K  cn si-tech
 s80n18r s80n18s s80n18rn s80n18rp.pdf pdf_icon

S80N18R

S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S

 9.1. Size:495K  1
 s80n10r s80n10s.pdf pdf_icon

S80N18R

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Techs advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st

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