All MOSFET. SRC60R068BSTL Datasheet

 

SRC60R068BSTL Datasheet and Replacement


   Type Designator: SRC60R068BSTL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 171 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TOLL
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SRC60R068BSTL Datasheet (PDF)

 ..1. Size:1103K  sanrise-tech
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SRC60R068BSTL

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 3.1. Size:1755K  sanrise-tech
src60r068bs.pdf pdf_icon

SRC60R068BSTL

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 6.1. Size:1266K  sanrise-tech
src60r064s.pdf pdf_icon

SRC60R068BSTL

Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power

 7.1. Size:1038K  1
src60r078b.pdf pdf_icon

SRC60R068BSTL

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFP21N60L | STD6N60M2

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