All MOSFET. SRC65R024B Datasheet

 

SRC65R024B MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRC65R024B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 695 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 346 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 8400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO247

 SRC65R024B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRC65R024B Datasheet (PDF)

 ..1. Size:1372K  sanrise-tech
src65r024b.pdf

SRC65R024B
SRC65R024B

Datasheet24m, 650V, Super Junction N-Channel Power MOSFET SRC65R024BGeneral Description SymbolThe Sanrise SRC65R024B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.1. Size:1010K  sanrise-tech
src65r052fb.pdf

SRC65R024B
SRC65R024B

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.2. Size:1197K  sanrise-tech
src65r032fb.pdf

SRC65R024B
SRC65R024B

Datasheet32m, 650V, Super Junction N-Channel Power MOSFET SRC65R032FBGeneral Description SymbolThe Sanrise SRC65R032FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.3. Size:1174K  sanrise-tech
src65r040b.pdf

SRC65R024B
SRC65R024B

Datasheet40m, 650V, Super Junction N-Channel Power MOSFET SRC65R040BGeneral Description SymbolThe Sanrise SRC65R040B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.4. Size:1881K  sanrise-tech
src65r085bs.pdf

SRC65R024B
SRC65R024B

Datasheet85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085BSGeneral Description SymbolThe Sanrise SRC65R085BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.5. Size:1237K  sanrise-tech
src65r082b.pdf

SRC65R024B
SRC65R024B

Datasheet82m, 650V, Super Junction N-Channel Power MOSFET SRC65R082BGeneral Description SymbolThe Sanrise SRC65R082B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.6. Size:1267K  sanrise-tech
src65r072b.pdf

SRC65R024B
SRC65R024B

Datasheet72m, 650V, Super Junction N-Channel Power MOSFET SRC65R072BGeneral Description SymbolThe Sanrise SRC65R072B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.7. Size:1301K  sanrise-tech
src65r042b.pdf

SRC65R024B
SRC65R024B

Datasheet42m, 650V, Super Junction N-Channel Power MOSFET SRC65R042BGeneral Description SymbolThe Sanrise SRC65R042B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.8. Size:907K  sanrise-tech
src65r085b.pdf

SRC65R024B
SRC65R024B

Datasheet 85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.9. Size:2043K  sanrise-tech
src65r068bs.pdf

SRC65R024B
SRC65R024B

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.10. Size:1291K  sanrise-tech
src65r068bstl.pdf

SRC65R024B
SRC65R024B

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AP60WN650I

 

 
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