All MOSFET. FDML7610S Datasheet

 

FDML7610S MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDML7610S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: MLP

 FDML7610S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDML7610S Datasheet (PDF)

 ..1. Size:471K  fairchild semi
 fdml7610s.pdf

FDML7610S FDML7610S

April 2010FDML7610SDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 28 A, 4.2 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchrono

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