SRC65R650B Datasheet and Replacement

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650B General Description Symbol The Sanrise SRC65R650B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650 General Description Symbol The Sanrise SRC65R650 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet600m, 650V, Super Junction N-Channel Power MOSFET SRC65R600ECGeneral Description SymbolThe Sanrise SRC65R600EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800General Description SymbolThe Sanrise SRC65R800 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220BSGeneral Description SymbolThe Sanrise SRC65R220BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet32m, 650V, Super Junction N-Channel Power MOSFET SRC65R032FBGeneral Description SymbolThe Sanrise SRC65R032FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet230m, 650V, Super Junction N-Channel Power MOSFET SRC65R230BSGeneral Description SymbolThe Sanrise SRC65R230BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330ECGeneral Description SymbolThe Sanrise SRC65R330EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet40m, 650V, Super Junction N-Channel Power MOSFET SRC65R040BGeneral Description SymbolThe Sanrise SRC65R040B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085BSGeneral Description SymbolThe Sanrise SRC65R085BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet82m, 650V, Super Junction N-Channel Power MOSFET SRC65R082BGeneral Description SymbolThe Sanrise SRC65R082B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet72m, 650V, Super Junction N-Channel Power MOSFET SRC65R072BGeneral Description SymbolThe Sanrise SRC65R072B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 220m, 650V, PDFN8*8, Super Junction N-Channel Power MOSFET SRC65R220 General Description Symbol The Sanrise SRC65R220 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet340m, 600V, Super Junction N-Channel Power MOSFET SRC65R340ECGeneral Description SymbolThe Sanrise SRC65R340EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet42m, 650V, Super Junction N-Channel Power MOSFET SRC65R042BGeneral Description SymbolThe Sanrise SRC65R042B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 290m, 650V, Super Junction N-Channel Power MOSFET SRC65R290E General Description Symbol The Sanrise SRC65R290E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330BGeneral Description SymbolThe Sanrise SRC65R330B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800M2General Description SymbolThe Sanrise SRC65R800M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800E General Description Symbol The Sanrise SRC65R800E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 180m, 650V, Super Junction N-Channel Power MOSFET SRC65R180 General Description Symbol The Sanrise SRC65R180 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet24m, 650V, Super Junction N-Channel Power MOSFET SRC65R024BGeneral Description SymbolThe Sanrise SRC65R024B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet170m, 650V, Super Junction N-Channel Power MOSFET SRC65R170BGeneral Description SymbolThe Sanrise SRC65R170B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity