SRT04N037LS Specs and Replacement
Type Designator: SRT04N037LS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 487 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: PDFN5X6 PDFN3.3X3.3
SRT04N037LS substitution
- MOSFET ⓘ Cross-Reference Search
SRT04N037LS datasheet
srt04n037ls.pdf
Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037LS General Description Symbol The Sanrise SRT04N037LS is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Sy... See More ⇒
srt04n037l.pdf
Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037L General Description Symbol The Sanrise SRT04N037L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Symb... See More ⇒
srt04n024ld56tr-gs.pdf
Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which... See More ⇒
srt04n016il.pdf
Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super... See More ⇒
Detailed specifications: SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, SRT04N037L, 12N60, SRT06N022HD, SRT06N022HS, SRT06N022HT, SRT06N027HD, SRT06N027HT, SRT06N095LD56G, SRT06N095LMG, SRT06N095LDG
Keywords - SRT04N037LS MOSFET specs
SRT04N037LS cross reference
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SRT04N037LS substitution
SRT04N037LS replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SRT04N016LTC-GS | SM6008NSG | AM2337P | AM9945NE | PHB47NQ10T
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