SRT08N025HS Specs and Replacement
Type Designator: SRT08N025HS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 810 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO263
SRT08N025HS substitution
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SRT08N025HS datasheet
srt08n025hc56tr-g.pdf
Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S... See More ⇒
srt08n025h.pdf
Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior ... See More ⇒
srt08n055h.pdf
Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio... See More ⇒
srt08n015htltr-g.pdf
Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and... See More ⇒
Detailed specifications: SRT06N027HT, SRT06N095LD56G, SRT06N095LMG, SRT06N095LDG, SRT06N095LD33G, SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, BS170, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L
Keywords - SRT08N025HS MOSFET specs
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