SRT10N040L Specs and Replacement

Type Designator: SRT10N040L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PDFN5X6

SRT10N040L substitution

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SRT10N040L datasheet

 ..1. Size:1152K  sanrise-tech
 srt10n040l.pdf pdf_icon

SRT10N040L

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superi... See More ⇒

 5.1. Size:1302K  sanrise-tech
 srt10n040hc.pdf pdf_icon

SRT10N040L

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040HC General Description Symbol The Sanrise SRT10N040HC is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchron... See More ⇒

 6.1. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N040L

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒

 6.2. Size:728K  sanrise-tech
 srt10n047hc56tr-g.pdf pdf_icon

SRT10N040L

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which ... See More ⇒

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Detailed specifications: SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, SRT10N040HC, SI2302, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC, SRT10N047HTF, SRT10N047HS2, SRT10N047HT

Keywords - SRT10N040L MOSFET specs

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