All MOSFET. SRT10N043HD Datasheet

 

SRT10N043HD Datasheet and Replacement


   Type Designator: SRT10N043HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 125 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: PDFN5X6
 

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SRT10N043HD Datasheet (PDF)

 4.1. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N043HD

Datasheet4.3m, 100V, N-Channel Power MOSFET SRT10N043HGeneral Description SymbolThe Sanrise SRT10N043H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

 6.1. Size:1152K  sanrise-tech
 srt10n040l.pdf pdf_icon

SRT10N043HD

Datasheet 4.0m, 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superi

 6.2. Size:728K  sanrise-tech
 srt10n047hc56tr-g.pdf pdf_icon

SRT10N043HD

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

 6.3. Size:1302K  sanrise-tech
 srt10n040hc.pdf pdf_icon

SRT10N043HD

Datasheet4.0m, 100V, N-Channel Power MOSFET SRT10N040HCGeneral Description SymbolThe Sanrise SRT10N040HC is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchron

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Datasheet: SRT08N025HC56TR-G , SRT08N055H , SRT08N100LM , SRT08N100LT , SRT08N100LD , SRT10N022HTLTR-G , SRT10N040HC , SRT10N040L , 7N60 , SRT10N043HT , SRT10N043HS , SRT10N047HD56 , SRT10N047HTC , SRT10N047HTF , SRT10N047HS2 , SRT10N047HT , SRT10N047HTL .

History: IRFB3077G | SSPL6040

Keywords - SRT10N043HD MOSFET datasheet

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