SRT10N043HS Datasheet and Replacement

Datasheet4.3m, 100V, N-Channel Power MOSFET SRT10N043HGeneral Description SymbolThe Sanrise SRT10N043H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

Datasheet 4.0m, 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superi

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

Datasheet4.0m, 100V, N-Channel Power MOSFET SRT10N040HCGeneral Description SymbolThe Sanrise SRT10N040HC is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchron

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

Datasheet4.7m, 100V, N-Channel Power MOSFET SRT10N047HGeneral Description SymbolThe Sanrise SRT10N047H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-263-2/TO-220C/TO-24