SRT15N075HS2 Specs and Replacement
Type Designator: SRT15N075HS2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 113 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
SRT15N075HS2 substitution
- MOSFET ⓘ Cross-Reference Search
SRT15N075HS2 datasheet
srt15n075h.pdf
Datasheet 7.5m , 150V, N-Channel Power MOSFET SRT15N075H General Description Symbol The Sanrise SRT15N075H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒
srt15n050h.pdf
Datasheet 5.0m , 150V, N-Channel Power MOSFET SRT15N050H General Description Symbol The Sanrise SRT15N050H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒
srt15n059h.pdf
Datasheet 5.9m , 150V, N-Channel Power MOSFET SRT15N059H General Description Symbol The Sanrise SRT15N059H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒
srt15n090h.pdf
Datasheet 9.0m , 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior... See More ⇒
Detailed specifications: SRT15N050HS2, SRT15N050HT, SRT15N050HTL, SRT15N059HTC, SRT15N059HS2, SRT15N059HT, SRT15N059HTL, SRT15N075HTC, IRF1404, SRT15N075HD56, SRT15N090HTC, SRT15N090HS2, SRT15N090HD56, SRT15N110HD56, SRT15N110HTC, SRT15N110L, SRT15N750LD
Keywords - SRT15N075HS2 MOSFET specs
SRT15N075HS2 cross reference
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SRT15N075HS2 substitution
SRT15N075HS2 replacement
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