SRT15N075HD56 MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT15N075HD56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 113 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 64.2 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: PDFN5X6
SRT15N075HD56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT15N075HD56 Datasheet (PDF)
srt15n075h.pdf
Datasheet7.5m, 150V, N-Channel Power MOSFET SRT15N075HGeneral Description SymbolThe Sanrise SRT15N075H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n050h.pdf
Datasheet5.0m, 150V, N-Channel Power MOSFET SRT15N050HGeneral Description SymbolThe Sanrise SRT15N050H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n059h.pdf
Datasheet5.9m, 150V, N-Channel Power MOSFET SRT15N059HGeneral Description SymbolThe Sanrise SRT15N059H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n090h.pdf
Datasheet 9.0m, 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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