SVT077R5ND Specs and Replacement
Type Designator: SVT077R5ND
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 296 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
SVT077R5ND substitution
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SVT077R5ND datasheet
svt078r0nt svt078r0ns svt078r0nstr.pdf
SVT078R0NT/S 88A 68V N 2 SVT078R0NT/S N MOS LVMOS 1 ... See More ⇒
svt078r0nd.pdf
R UMW SVT078R0ND 68V N-Channel Power Mosfet UMW SVT078R0ND General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 68V,ID =88A RDS(ON),6.3m (Typ) @ VGS =10V Low On-Resistance Low gate charge Fast switching Low reverse transfer capa... See More ⇒
Detailed specifications: SRT15N110L, SRT15N750LD, SRT15N750LM, SRT15N750LD56, SRT20N090HTC, SRT20N090HS2, 2SK3995, SVT077R5NT, IRFP250N, SVT077R5NS, WML38N60C2, WMK38N60C2, WMN38N60C2, WMM38N60C2, WMJ38N60C2, AONR32340C, HCS80R380S
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