All MOSFET. SVT077R5ND Datasheet

 

SVT077R5ND MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVT077R5ND
   Marking Code: 077R5ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO252

 SVT077R5ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVT077R5ND Datasheet (PDF)

 ..1. Size:442K  1
 svt077r5nt svt077r5nd svt077r5ns.pdf

SVT077R5ND SVT077R5ND

SVT077R5NT/D/S 95A68V N 2SVT077R5NT/D/S N MOS 1 LVMOS 3

 9.1. Size:346K  silan
 svt078r0nt svt078r0ns svt078r0nstr.pdf

SVT077R5ND SVT077R5ND

SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1

 9.2. Size:1010K  umw-ic
 svt078r0nd.pdf

SVT077R5ND SVT077R5ND

RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top