WMM38N60C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM38N60C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO263
WMM38N60C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM38N60C2 Datasheet (PDF)
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