HY3007B Datasheet and Replacement
Type Designator: HY3007B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
HY3007B substitution
HY3007B Datasheet (PDF)
hy3007p hy3007m hy3007b hy3007ps hy3007pm.pdf

HY3007P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures / 68V 120 A5.0 (typ.) @ VGS=10VRDS(ON)= mSDGSD Avalanche RatedGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGApplications TO-3PS-3L TO-3PM-3S Power Management for Inverter Sy
hy3003p hy3003b.pdf

HY3003P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100ARDS(ON)= 3.5m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous
hy3003d hy3003u hy3003v.pdf

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hy3008p hy3008m hy3008b hy3008mf hy3008pl hy3008pm.pdf

HY3008P/M/B/ MF /PL/PMN-Channel Enhancement Mode MOSFET Feature Pin Description 80V/100ARDS(ON)= 6.6m(typ.)@VGS = 10V SDG 100% Avalanche Tested SDG Reliable and Rugged SDG Lead- Free Devices Available TO-220FB-3LTO-220FB-3M TO-263-2L(RoHS Compliant) Applications SD Switching applicationGSSDD Power management for inverter systems
Datasheet: WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , AONR32340C , HCS80R380S , HY3007P , HY3007M , SPP20N60C3 , HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S , CMD5941 , CMU5941 , MMBF4860 .
Keywords - HY3007B MOSFET datasheet
HY3007B cross reference
HY3007B equivalent finder
HY3007B lookup
HY3007B substitution
HY3007B replacement
History: PTS2017 | HCD80R1K2



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