S80N10S Specs and Replacement

Type Designator: S80N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 489 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

S80N10S substitution

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S80N10S datasheet

 ..1. Size:495K  1
 s80n10r s80n10s.pdf pdf_icon

S80N10S

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st... See More ⇒

 ..2. Size:2299K  cn si-tech
 s80n10r s80n10s s80n10rn s80n10rp.pdf pdf_icon

S80N10S

S80N10R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=100A DC Motor Control Rds(on)(typ)=6.3m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D ... See More ⇒

 8.1. Size:1114K  jilin sino
 jcs80n10i.pdf pdf_icon

S80N10S

N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap... See More ⇒

 8.2. Size:914K  cn hmsemi
 hms80n10ka.pdf pdf_icon

S80N10S

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

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Detailed specifications: HCS80R380S, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, NCE80H11, S80N10R, K4145, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W, LCS50P03, HCCW120R040H1

Keywords - S80N10S MOSFET specs

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