All MOSFET. VS3614AD Datasheet

 

VS3614AD MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS3614AD
   Marking Code: 3614AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252

 VS3614AD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS3614AD Datasheet (PDF)

 ..1. Size:1012K  cn vgsemi
vs3614ad.pdf

VS3614AD
VS3614AD

VS3614AD30V/75A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A Fast Switching and High efficiencyTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3614ADTO-252 3614AD 2500pcs/

 7.1. Size:1043K  cn vgsemi
vs3614ae.pdf

VS3614AD
VS3614AD

VS3614AE30V/58A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 58 A Fast Switching and High efficiencyPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3614AE PDFN3333 3614AE

 8.1. Size:897K  cn vgsemi
vs3614gp.pdf

VS3614AD
VS3614AD

VS3614GP30V/31A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 3.7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 6.2 m Very low on-resistanceI D(Silicon Limited) 60 A VitoMOS TechnologyI D(Package Limited) 31 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packin

 8.2. Size:784K  cn vgsemi
vs3614ge.pdf

VS3614AD
VS3614AD

VS3614GE30V/31A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.8 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 31 A VitoMOS Technolog 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3614GE PDFN3333 3614GE 5000PCS/ReelMa

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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