VS3638GE Specs and Replacement

Type Designator: VS3638GE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN3333

VS3638GE substitution

- MOSFET ⓘ Cross-Reference Search

 

VS3638GE datasheet

 ..1. Size:1664K  cn vgsemi
vs3638ge.pdf pdf_icon

VS3638GE

VS3638GE 30V/23A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 11 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 20 m VitoMOS Technology I D(Silicon Limited) 40 A Fast Switching and High efficiency I D(Package Limited) 23 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3638GE PDFN3333 3638GE... See More ⇒

 7.1. Size:1074K  cn vgsemi
vs3638ga.pdf pdf_icon

VS3638GE

VS3638GA 30V/12A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 10 m R DS(on),TYP@ VGS=4.5 V 18 m Enhancement mode VitoMOS Technology I D 12 A Low Gate Charge DFN2x2x0.75-6L Part ID Package Type Marking Packing VS3638GA DFN2x2x0.75-6L 3638 3000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Ratin... See More ⇒

 8.1. Size:1065K  cn vgsemi
vs3638de-g.pdf pdf_icon

VS3638GE

VS3638DE-G 30V/15A Dual N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 12 m Dual N-Channel R DS(on),TYP@ VGS=4.5V 20 m Enhancement mode I D(Silicon Limited) 27 A VitoMOS Technology I D(Package Limited) 15 A Fast Switching and High efficiency PDFN3333 Dual 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Pac... See More ⇒

 9.1. Size:836K  cn vgsemi
vs3633ge.pdf pdf_icon

VS3638GE

VS3633GE 30V/24A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 15 m VitoMOS Technology I D(Silicon Limited) 32 A Fast Switching and High efficiency I D(Package Limited) 24 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3633GE PDFN3333 3633G... See More ⇒

Detailed specifications: VS3625GPMC, VS3628DB, VS3628GA, VS3628GE, VS3628GP, VS3633GA, VS3633GE, VS3638GA, IRF840, VS3640AA, VS3640AC, VS3640AD, VS3640AE, VS3640AS, VS3640AT, VS3640BC, VS3645GA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.