VS3662DB Specs and Replacement

Type Designator: VS3662DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: DFN3X3

VS3662DB substitution

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VS3662DB datasheet

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 vs3662db.pdf pdf_icon

VS3662DB

VS3662DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 10 6.5 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 19 11 m VitoMOS Technology I D(Wire bond Limited) 15 30 A 100% Avalanche Tested,100% Rg Tested DFN3x3 Part ID Package Type Marking Packing VS3662DB DFN3x3 3662DB 5000pcs/Reel Maximum ratings, at T... See More ⇒

Detailed specifications: VS3640AT, VS3640BC, VS3645GA, VS3645GE, VS3646ACL, VS3646ACM, VS3647DB, VS3652DB, IRFB4227, VS3698AD, VS3698AE, VS3698AP, VS3698AT, VS3803GPMT, VS3817GA, VS3817GPMT, VS3820GA2

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