All MOSFET. VS3662DB Datasheet

 

VS3662DB Datasheet and Replacement


   Type Designator: VS3662DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3
 

 VS3662DB substitution

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VS3662DB Datasheet (PDF)

 ..1. Size:1048K  cn vgsemi
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VS3662DB

VS3662DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 6.5 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 19 11 m VitoMOS TechnologyI D(Wire bond Limited) 15 30 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3662DB DFN3x3 3662DB 5000pcs/ReelMaximum ratings, at T

Datasheet: VS3640AT , VS3640BC , VS3645GA , VS3645GE , VS3646ACL , VS3646ACM , VS3647DB , VS3652DB , AON6414A , VS3698AD , VS3698AE , VS3698AP , VS3698AT , VS3803GPMT , VS3817GA , VS3817GPMT , VS3820GA2 .

History: AM3940N | 2SK2608 | LP2305LT1G | SM6A17NSFP | TK25N60X | PT530BA | 2SK1511

Keywords - VS3662DB MOSFET datasheet

 VS3662DB cross reference
 VS3662DB equivalent finder
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