All MOSFET. VS3662DB Datasheet

 

VS3662DB Datasheet and Replacement


   Type Designator: VS3662DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3
 

 VS3662DB substitution

   - MOSFET ⓘ Cross-Reference Search

 

VS3662DB Datasheet (PDF)

 ..1. Size:1048K  cn vgsemi
 vs3662db.pdf pdf_icon

VS3662DB

VS3662DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 6.5 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 19 11 m VitoMOS TechnologyI D(Wire bond Limited) 15 30 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3662DB DFN3x3 3662DB 5000pcs/ReelMaximum ratings, at T

Datasheet: VS3640AT , VS3640BC , VS3645GA , VS3645GE , VS3646ACL , VS3646ACM , VS3647DB , VS3652DB , IRFB4227 , VS3698AD , VS3698AE , VS3698AP , VS3698AT , VS3803GPMT , VS3817GA , VS3817GPMT , VS3820GA2 .

History: RU1H35L | STV60NE06-16

Keywords - VS3662DB MOSFET datasheet

 VS3662DB cross reference
 VS3662DB equivalent finder
 VS3662DB lookup
 VS3662DB substitution
 VS3662DB replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.