VSE003N04MS-G Specs and Replacement

Type Designator: VSE003N04MS-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: PDFN3333

VSE003N04MS-G substitution

- MOSFET ⓘ Cross-Reference Search

 

VSE003N04MS-G datasheet

 ..1. Size:926K  cn vgsemi
vse003n04ms-g.pdf pdf_icon

VSE003N04MS-G

VSE003N04MS-G 40V/40A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 2.8 m Low RDS(on) to minimize conduction losses I D(Package Limited) 40 A VitoMOS Technology Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ... See More ⇒

 3.1. Size:1246K  cn vgsemi
vse003n04msc-g.pdf pdf_icon

VSE003N04MS-G

VSE003N04MSC-G 40V/100A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),Typ@ VGS=10 V 2.3 m Enhancement mode R DS(on),Typ@ VGS=4.5 V 3.4 m Very Low On-Resistance I D 100 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 100% Avalanche test Part ID Package Type Marking Packing VSE003N04MSC-G PDFN3333 03N04M 5000PCS/Reel Max... See More ⇒

 9.1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE003N04MS-G

VSE009NE6MS-G 60V/50A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10V 7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D 50 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VSE009NE6MS-G PDFN3333 009NE6M 5000pcs/Reel Maximum ratings, at T A=25 C, unle... See More ⇒

 9.2. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE003N04MS-G

VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS 25 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 3.3V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High Efficiency I D 55 A Fast Switching Enhancement mode PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008NE2... See More ⇒

Detailed specifications: VSA030C03LD, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, VSD007N04MS-G, VSD020C04MC, VSE002N03MS-G, VSE003N04MSC-G, AO3400A, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G, VSE008N03LS, VSE008NE2LS, VSE044C03MD, VSE2R5N03MS

Keywords - VSE003N04MS-G MOSFET specs

 VSE003N04MS-G cross reference

 VSE003N04MS-G equivalent finder

 VSE003N04MS-G pdf lookup

 VSE003N04MS-G substitution

 VSE003N04MS-G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility