All MOSFET. VSE007N04MS-G Datasheet

 

VSE007N04MS-G Datasheet and Replacement


   Type Designator: VSE007N04MS-G
   Marking Code: 07N04M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26.5 nC
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: PDFN3333
 

 VSE007N04MS-G substitution

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VSE007N04MS-G Datasheet (PDF)

 ..1. Size:1066K  cn vgsemi
vse007n04ms-g.pdf pdf_icon

VSE007N04MS-G

VSE007N04MS-G40V/75A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.2 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.9 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A VitoMOS TechnologyPDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen freePart ID Package Type Marking PackingVSE007

 9.1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE007N04MS-G

VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle

 9.2. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE007N04MS-G

VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2

 9.3. Size:966K  cn vgsemi
vse004n04ms.pdf pdf_icon

VSE007N04MS-G

VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - VSE007N04MS-G MOSFET datasheet

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