All MOSFET. VSP002N03MST-G Datasheet

 

VSP002N03MST-G Datasheet and Replacement


   Type Designator: VSP002N03MST-G
   Marking Code: 002N03M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 163 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: PDFN5X6
 

 VSP002N03MST-G substitution

   - MOSFET ⓘ Cross-Reference Search

 

VSP002N03MST-G Datasheet (PDF)

 ..1. Size:1131K  cn vgsemi
vsp002n03mst-g.pdf pdf_icon

VSP002N03MST-G

VSP002N03MST-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistanceI D(Silicon Limited) 163 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche TestedPart ID Package Type Marking PackingVSP

 3.1. Size:1019K  cn vgsemi
vsp002n03ms-g.pdf pdf_icon

VSP002N03MST-G

VSP002N03MS-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 150 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP002N03MS-G PDFN5x6 002N03M 30

 3.2. Size:1023K  cn vgsemi
vsp002n03ms.pdf pdf_icon

VSP002N03MST-G

VSP002N03MS30V/100A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High EfficiencyI D(Silicon Limited) 365 A High Current CapabilityI D(Package Limited) 100 A Enable Better Thermal DissipationPDFN5x6 100% Avalanche TestPart ID Package

 9.1. Size:779K  cn vanguard
vsp007n07ms.pdf pdf_icon

VSP002N03MST-G

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - VSP002N03MST-G MOSFET datasheet

 VSP002N03MST-G cross reference
 VSP002N03MST-G equivalent finder
 VSP002N03MST-G lookup
 VSP002N03MST-G substitution
 VSP002N03MST-G replacement

 

 
Back to Top

 


 
.