ME13N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: ME13N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 29.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 11.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.4 nC
trⓘ - Rise Time: 10.9 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO252
ME13N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME13N10A Datasheet (PDF)
me13n10a me13n10a-g.pdf
ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME13N10A is the N-Channel logic enhancement mode power RDS(ON) 145m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-res
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