All MOSFET. ME13N10A Datasheet

 

ME13N10A Datasheet and Replacement


   Type Designator: ME13N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TO252
 

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ME13N10A Datasheet (PDF)

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ME13N10A

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME13N10A is the N-Channel logic enhancement mode power RDS(ON) 145m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-res

Datasheet: JY09M , ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , ME1302AT3-G , ME1303AT3 , ME1303AT3-G , IRF3710 , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T , ME200N04T-G , ME20N10-G .

History: NTB18N06L | SIR882DP | IRF9952Q | IRLML2244TRPBF | SRM10N60TF | SWD075R06ET | IRF830SPBF

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