ME15N25F Specs and Replacement

Type Designator: ME15N25F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.4 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO220F

ME15N25F substitution

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ME15N25F datasheet

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 me15n25f me15n25f-g.pdf pdf_icon

ME15N25F

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 220m @VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒

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 me15n25 me15n25-g.pdf pdf_icon

ME15N25F

ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME15N25 is the N-Channel logic enhancement mode power RDS(ON) 265m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi... See More ⇒

 9.1. Size:995K  matsuki electric
 me15n10 me15n10g.pdf pdf_icon

ME15N25F

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is ... See More ⇒

 9.2. Size:1197K  matsuki electric
 me15n10 me15n10-g.pdf pdf_icon

ME15N25F

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is ... See More ⇒

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Detailed specifications: ME120N04T, ME1302AT3, ME1302AT3-G, ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G, ME15N25, 10N60, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G, ME20N10-G, ME20N15F, ME2301A, ME2301A-G

Keywords - ME15N25F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.