All MOSFET. ME20N15F Datasheet

 

ME20N15F MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME20N15F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32.3 nC
   trⓘ - Rise Time: 6.02 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO220F

 ME20N15F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME20N15F Datasheet (PDF)

 ..1. Size:1216K  matsuki electric
 me20n15f.pdf

ME20N15F ME20N15F

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 7.1. Size:1097K  matsuki electric
 me20n15 me20n15-g.pdf

ME20N15F ME20N15F

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

 8.1. Size:1167K  matsuki electric
 me20n10 me20n10-g.pdf

ME20N15F ME20N15F

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON)78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 8.2. Size:846K  cn vbsemi
 me20n10.pdf

ME20N15F ME20N15F

ME20N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

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