ME20N15F Specs and Replacement

Type Designator: ME20N15F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.02 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO220F

ME20N15F substitution

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ME20N15F datasheet

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ME20N15F

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to... See More ⇒

 7.1. Size:1097K  matsuki electric
 me20n15 me20n15-g.pdf pdf_icon

ME20N15F

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t... See More ⇒

 8.1. Size:1167K  matsuki electric
 me20n10 me20n10-g.pdf pdf_icon

ME20N15F

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)... See More ⇒

 8.2. Size:846K  cn vbsemi
 me20n10.pdf pdf_icon

ME20N15F

ME20N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (... See More ⇒

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Detailed specifications: ME13N10A-G, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G, ME20N10-G, 7N65, ME2301A, ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN, ME2301DN-G, ME2301GC, ME2301GC-G

Keywords - ME20N15F MOSFET specs

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