ME2301DN Specs and Replacement

Type Designator: ME2301DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 831 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN1006-3

ME2301DN substitution

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ME2301DN datasheet

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 me2301dn me2301dn-g.pdf pdf_icon

ME2301DN

ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig... See More ⇒

 7.1. Size:1999K  matsuki electric
 me2301dc me2301dc-g.pdf pdf_icon

ME2301DN

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design ... See More ⇒

 8.1. Size:1077K  matsuki electric
 me2301a me2301a-g.pdf pdf_icon

ME2301DN

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat... See More ⇒

 8.2. Size:1127K  matsuki electric
 me2301 me2301-g.pdf pdf_icon

ME2301DN

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es... See More ⇒

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Detailed specifications: ME200N04T, ME200N04T-G, ME20N10-G, ME20N15F, ME2301A, ME2301A-G, ME2301DC, ME2301DC-G, 2SK3878, ME2301DN-G, ME2301GC, ME2301GC-G, ME2301S, ME2301S-G, ME2302-G, ME2303, ME2303-G

Keywords - ME2301DN MOSFET specs

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