ME2301GC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2301GC
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.1
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 82
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SOT23
ME2301GC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2301GC
Datasheet (PDF)
..1. Size:1321K matsuki electric
me2301gc me2301gc-g.pdf 
ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m@VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m@VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=-1.8V trench technology. This high density process is especially tailored to Sup
8.1. Size:1077K matsuki electric
me2301a me2301a-g.pdf
ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m@VGS=-1.8V minimize on-stat
8.2. Size:1127K matsuki electric
me2301 me2301-g.pdf
ME2301/ME2301-G P-Channel Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es
8.3. Size:1999K matsuki electric
me2301dc me2301dc-g.pdf
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m@VGS=-4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 150m@VGS=-2.5Vtrench technology. This high density process is especially tailored to Super high density cell design
8.4. Size:1298K matsuki electric
me2301dn me2301dn-g.pdf
ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m@VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig
8.5. Size:1009K matsuki electric
me2301s me2301s-g.pdf
ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec
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