ME2306AS MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2306AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 12.3 nS
Cossⓘ - Output Capacitance: 61 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0345 Ohm
Package: SOT23
ME2306AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2306AS Datasheet (PDF)
me2306as me2306as-g.pdf
ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON)34.5m@VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON)38m@VGS=4.5V technology.This high density process is especially tailored to RDS(ON)50m@VGS=2.5V minimize on-state resistance.These
me2306an me2306an-g.pdf
Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r
me2306a me2306a-g.pdf
ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON)34.5m@VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON)38m@VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON)50m@VGS=2.5V resistance. Su
me2306bs me2306bs-g.pdf
ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These
me2306n me2306n-g.pdf
ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi
me2306s me2306s-g.pdf
ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor
me2306ds me2306ds-g.pdf
ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state
me2306d me2306d-g.pdf
ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res
me2306 me2306-g.pdf
ME2306/ME2306-G N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)37m@VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON)49m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to
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